| 1. | That all ensures you can get the most davnced film deposition machine in our company
先进的技术，保证了我公司的技术设备具有世界超一流的水准。 |
| 2. | A lot thin film deposition experiments have been carried out and the optimal condition for the deposition is obtained
这里基于国产设备进行了大量的实验，得到了丰富的测试数据。 |
| 3. | Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication , such as plasma etching and films deposition
本论文介绍了我们对ecr等离子体cvd系统的测试、 bn薄膜的制备和薄膜光学特性研究。 |
| 4. | These excellent abilities can be contributed to the mechanism of saturated chemi - sorption and self - limiting film deposition , which differs from traditional deposition technology
这些杰出的能力可归功于跟传统镀膜技术不一样的饱和化学吸附与自我限制的镀膜机制。 |
| 5. | These excellent abilities can be contributed to the mechanism of saturated chemi - sorption and self - limiting film deposition , which differs from traditional deposition technology
这些杰出的能力可归功于跟常规镀膜技术不一样的饱和化学吸附与自我限制的镀膜机制。 |
| 6. | The analysis is instructive for future research , though its application is currently limited by the conditions in practice . an in - situ optical monitor system for thin film deposition is developed
虽然最优化方法在实际监控及反演过程中受到应用条件的限制，但是这些分析对于今后工作的指导是很有意义的。 |
| 7. | In this paper , it was introduced of the system designing , debugging and optimizing . the substrate saturation ion current and film deposition rate were measured and ion efficiency was obtained
介绍了脉冲磁过滤阴极弧的系统组成、设计和调试，并详细介绍了调试中碰到的各种具体问题及其分析解决过程及方法。 |
| 8. | Ocean optics has pioneered an optical coatings production methodology that combines modern optical thin film deposition techniques with the precision and mass - production capabilities of microlithographic procedures
中国海洋光学公司领先研发了一种光学涂层产品方法，结合了先进的光学薄膜沉积技术和精确的大规模微型平版印刷生产能力。 |
| 9. | It is verified that the temperature of graphitization increases up to 300 ? in the film deposition by hipib ablated plasma , which is much higher than the other film deposition methods with graphitization temperature of less than 200 ?
当基片温度达到300时所沉积的dlc薄膜中sp ~ 3c含量开始减少，表明hipib烧蚀等离子体沉积的dlc薄膜的石墨化转变温度提高到300 (其他方法一般低于200 ) 。 |
| 10. | The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
采用pld技术进行了碳氮化合物薄膜沉积，得到了含氮量为21at的cn薄膜；研究了衬底温度和反应气体压强对薄膜结构特性的影响，给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因；引入脉冲辉光放电等离子体增强pld的气相反应，给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径；应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ，得到了含n量为56at的晶态cn薄膜；探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系，证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果；采用光学发射谱技术对cn薄膜生长过程进行了实时诊断，得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律，给出了cn薄膜沉积的主要反应前驱物，揭示了cn薄膜特性和等离子体内反应过程之间的联系；采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性，揭示了si原子对薄膜生长过程的影响，给出了si基表面碳氮薄膜的生长模式；在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积，证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性，并可显著提高晶态碳氮材料的生长速率。 |
